Packaging :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
1,336
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IXYS MOSFET N-CH 100V 165A ECO-PAC2 HiPerFET™ Obsolete Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount ECO-PAC2 ECO-PAC2 400W (Tc) N-Channel - 100V 165A (Tc) 8 mOhm @ 90A, 10V 4V @ 8mA 400nC @ 10V 9400pF @ 25V 10V ±20V
IXFR180N10
Per Unit
$16.86
RFQ
3,038
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IXYS MOSFET N-CH 100V 165A ISOPLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 400W (Tc) N-Channel - 100V 165A (Tc) 8 mOhm @ 90A, 10V 4V @ 8mA 400nC @ 10V 9400pF @ 25V 10V ±20V
IXFK120N25
Per Unit
$15.91
RFQ
1,455
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IXYS MOSFET N-CH 250V 120A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 560W (Tc) N-Channel - 250V 120A (Tc) 22 mOhm @ 500mA, 10V 4V @ 8mA 400nC @ 10V 9400pF @ 25V 10V ±20V
IXFX120N25
Per Unit
$15.68
RFQ
3,728
Ships today + free overnight shipping
IXYS MOSFET N-CH 250V 120A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 560W (Tc) N-Channel - 250V 120A (Tc) 22 mOhm @ 500mA, 10V 4V @ 8mA 400nC @ 10V 9400pF @ 25V 10V ±20V
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