- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,036
Ships today + free overnight shipping
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IXYS | MOSFET N-CH 650V 8A X2 TO-252 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150W (Tc) | N-Channel | 650V | 8A (Tc) | 500 mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 25V | 10V | ±30V | ||||
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1,573
Ships today + free overnight shipping
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IXYS | MOSFET N-CH 650V 4A X2 TO-252 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 80W (Tc) | N-Channel | 650V | 4A (Tc) | 850 mOhm @ 2A, 10V | 5V @ 250µA | 8.3nC @ 10V | 455pF @ 25V | 10V | ±30V | ||||
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3,907
Ships today + free overnight shipping
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IXYS | MOSFET N-CH 650V 2A X2 TO-252 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 55W (Tc) | N-Channel | 650V | 2A (Tc) | 2.3 Ohm @ 1A, 10V | 5V @ 250µA | 4.3nC @ 10V | 180pF @ 25V | 10V | ±30V |