Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTT1N100
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RFQ
2,714
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 1.5A TO-268 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 60W (Tc) N-Channel - 1000V 1.5A (Tc) 11 Ohm @ 1A, 10V 4.5V @ 25µA 23nC @ 10V 480pF @ 25V 10V ±20V
IXTT10N100D2
Per Unit
$10.87
RFQ
3,106
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IXYS MOSFET N-CH 1000V 10A TO-267 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 695W (Tc) N-Channel Depletion Mode 1000V 10A (Tc) 1.5 Ohm @ 5A, 10V - 200nC @ 5V 5320pF @ 25V 10V ±20V
IXTT10N100D
Per Unit
$11.96
RFQ
943
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 10A TO-268 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 400W (Tc) N-Channel Depletion Mode 1000V 10A (Tc) 1.4 Ohm @ 10A, 10V 3.5V @ 250µA 130nC @ 10V 2500pF @ 25V 10V ±30V
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