Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFH10N100
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RFQ
785
Ships today + free overnight shipping
IXYS MOSFET N-CH 1KV 10A TO-247AD HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 300W (Tc) N-Channel - 1000V 10A (Tc) 1.2 Ohm @ 5A, 10V 4.5V @ 4mA 155nC @ 10V 4000pF @ 25V 10V ±20V
IXFR10N100Q
Per Unit
$28.73
RFQ
1,315
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 9A ISOPLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 250W (Tc) N-Channel - 1000V 9A (Tc) 1.2 Ohm @ 5A, 10V 5.5V @ 4mA 90nC @ 10V 2900pF @ 25V 10V ±20V
IXFH10N100Q
Per Unit
$12.19
RFQ
2,906
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 10A TO-247AD HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 300W (Tc) N-Channel - 1000V 10A (Tc) 1.2 Ohm @ 5A, 10V 4.5V @ 4mA 155nC @ 10V 4000pF @ 25V 10V ±20V
IXFT10N100
Per Unit
$11.90
RFQ
1,553
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 10A TO-268 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 300W (Tc) N-Channel - 1000V 10A (Tc) 1.2 Ohm @ 5A, 10V 4.5V @ 4mA 155nC @ 10V 4000pF @ 25V 10V ±20V
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