- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,236
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NXP USA Inc. | MOSFET N-CH 60V 290MA SOT416 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SC-75 | 260mW (Ta) | N-Channel | - | 60V | 290mA (Ta) | 1.6 Ohm @ 500mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 50pF @ 10V | 5V, 10V | ±20V | ||
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858
Ships today + free overnight shipping
|
NXP USA Inc. | MOSFET P-CH 20V 3.5A SOT1118 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 520mW (Ta), 8.3W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 3.5A (Ta) | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | 1.8V, 4.5V | ±8V |
