Supplier Device Package :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHB11N06LT,118
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RFQ
1,882
Ships today + free overnight shipping
NXP USA Inc. MOSFET N-CH 55V 10.3A D2PAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 33W (Tc) N-Channel - 55V 10.3A (Tc) 130 mOhm @ 5.5A, 10V 2V @ 1mA 5.2nC @ 5V 330pF @ 25V 5V, 10V ±15V
PHD3055E,118
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RFQ
2,006
Ships today + free overnight shipping
NXP USA Inc. MOSFET N-CH 60V 10.3A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 33W (Tc) N-Channel - 60V 10.3A (Tc) 150 mOhm @ 5.5A, 10V 4V @ 1mA 5.8nC @ 10V 250pF @ 25V 10V ±20V
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