Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BSH112,235
GET PRICE
RFQ
1,533
Ships today + free overnight shipping
NXP USA Inc. MOSFET N-CH 60V 300MA SOT-23 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 830mW (Tc) N-Channel 60V 300mA (Ta) 5 Ohm @ 500mA, 10V 2V @ 1mA - 40pF @ 10V 4.5V, 10V ±15V
2N7002K,215
GET PRICE
RFQ
3,225
Ships today + free overnight shipping
NXP USA Inc. MOSFET N-CH 60V 340MA SOT23 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 830mW (Ta) N-Channel 60V 340mA (Ta) 3.9 Ohm @ 500mA, 10V 2V @ 1mA - 40pF @ 10V 4.5V, 10V ±15V
Page 1 / 1