Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI2302DS,215
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RFQ
3,951
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NXP USA Inc. MOSFET N-CH 20V 2.5A SOT23 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 830mW (Tc) N-Channel - 20V 2.5A (Tc) 85 mOhm @ 3.6A, 4.5V 650mV @ 1mA 10nC @ 4.5V 230pF @ 10V 2.5V, 4.5V ±8V
PMV56XN,215
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RFQ
2,267
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NXP USA Inc. MOSFET N-CH 20V 3.76A SOT23 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 1.92W (Tc) N-Channel - 20V 3.76A (Tc) 85 mOhm @ 3.6A, 4.5V 650mV @ 1mA 5.4nC @ 4.5V 230pF @ 10V 2.5V, 4.5V ±8V
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