Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJK6014DPP-E0#T2
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RFQ
3,456
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Renesas Electronics America MOSFET N-CH 600V 16A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 35W (Tc) N-Channel 600V 16A (Ta) 575 mOhm @ 8A, 10V 45nC @ 10V 1800pF @ 25V 10V ±30V
RJK5014DPP-E0#T2
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RFQ
2,361
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Renesas Electronics America MOSFET N-CH 500V 19A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 35W (Tc) N-Channel 500V 19A (Ta) 390 mOhm @ 9.5A, 10V 46nC @ 10V 1800pF @ 25V 10V ±30V
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Per Unit
$0.68
RFQ
3,253
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Renesas Electronics America MOSFET N-CH 30V 40A WPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-WFDFN Exposed Pad 8-WPAK 35W (Tc) N-Channel 30V 40A (Ta) 3.9 mOhm @ 20A, 10V 15.7nC @ 4.5V 3010pF @ 10V 4.5V, 10V ±20V
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