Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJK2511DPK-00#T0
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RFQ
930
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Renesas Electronics America MOSFET N-CH 250V 65A TO3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 200W (Tc) N-Channel 250V 65A (Ta) 34 mOhm @ 32.5A, 10V 120nC @ 10V 4900pF @ 25V 10V ±30V
RJK0346DPA-01#J0B
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RFQ
926
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Renesas Electronics America MOSFET N-CH 30V 65A WPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerWDFN 8-WPAK 65W (Tc) N-Channel 30V 65A (Ta) 1.8 mOhm @ 25A, 10V 49nC @ 10V 7650pF @ 10V 4.5V, 10V ±20V
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