Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJK1056DPB-00#J5
Per Unit
$1.11
RFQ
3,376
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Renesas Electronics America MOSFET N-CH 100V 25A LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 65W (Tc) N-Channel 100V 25A (Ta) 14 mOhm @ 12.5A, 10V 41nC @ 10V 3000pF @ 10V 10V ±20V
RJK0651DPB-00#J5
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RFQ
2,281
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Renesas Electronics America MOSFET N-CH 60V 25A LFPAK - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 45W (Tc) N-Channel 60V 25A (Ta) 14 mOhm @ 12.5A, 10V 15nC @ 4.5V 2030pF @ 10V 4.5V, 10V ±20V
RJK0651DPB-00#J5
Per Unit
$1.42
RFQ
886
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Renesas Electronics America MOSFET N-CH 60V 25A LFPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 45W (Tc) N-Channel 60V 25A (Ta) 14 mOhm @ 12.5A, 10V 15nC @ 4.5V 2030pF @ 10V 4.5V, 10V ±20V
RJK0651DPB-00#J5
Per Unit
$0.55
RFQ
2,714
Ships today + free overnight shipping
Renesas Electronics America MOSFET N-CH 60V 25A LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 45W (Tc) N-Channel 60V 25A (Ta) 14 mOhm @ 12.5A, 10V 15nC @ 4.5V 2030pF @ 10V 4.5V, 10V ±20V
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