Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJK0652DPB-00#J5
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RFQ
2,623
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Renesas Electronics America MOSFET N-CH 60V 35A LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 55W (Tc) N-Channel 60V 35A (Ta) 7 mOhm @ 17.5A, 10V 29nC @ 4.5V 4100pF @ 10V 4.5V, 10V ±20V
RJK0451DPB-00#J5
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RFQ
2,056
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Renesas Electronics America MOSFET N-CH 40V 35A LFPAK - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 45W (Tc) N-Channel 40V 35A (Ta) 7 mOhm @ 17.5A, 10V 14nC @ 4.5V 2010pF @ 10V - -
RJK0451DPB-00#J5
Per Unit
$1.42
RFQ
2,071
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Renesas Electronics America MOSFET N-CH 40V 35A LFPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 45W (Tc) N-Channel 40V 35A (Ta) 7 mOhm @ 17.5A, 10V 14nC @ 4.5V 2010pF @ 10V - -
RJK0451DPB-00#J5
Per Unit
$0.55
RFQ
3,898
Ships today + free overnight shipping
Renesas Electronics America MOSFET N-CH 40V 35A LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 45W (Tc) N-Channel 40V 35A (Ta) 7 mOhm @ 17.5A, 10V 14nC @ 4.5V 2010pF @ 10V 4.5V, 10V ±20V
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