Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJK6014DPK-00#T0
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RFQ
1,952
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Renesas Electronics America MOSFET N-CH 600V 11A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 150W (Tc) N-Channel 600V 16A (Ta) 575 mOhm @ 8A, 10V 45nC @ 10V 1800pF @ 25V 10V ±30V
RJK6014DPP-E0#T2
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3,456
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Renesas Electronics America MOSFET N-CH 600V 16A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 35W (Tc) N-Channel 600V 16A (Ta) 575 mOhm @ 8A, 10V 45nC @ 10V 1800pF @ 25V 10V ±30V
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