Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJK6015DPM-00#T1
GET PRICE
RFQ
2,199
Ships today + free overnight shipping
Renesas Electronics America MOSFET N-CH 600V 21A TO3PFM - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3PFM, SC-93-3 TO-3PFM 60W (Tc) N-Channel 600V 21A (Ta) 360 mOhm @ 10.5A, 10V 67nC @ 10V 2600pF @ 25V 10V ±30V
RJK6015DPK-00#T0
GET PRICE
RFQ
2,458
Ships today + free overnight shipping
Renesas Electronics America MOSFET N-CH 600V 21A TO3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 150W (Tc) N-Channel 600V 21A (Ta) 360 mOhm @ 10.5A, 10V 67nC @ 10V 2600pF @ 25V 10V ±30V
Page 1 / 1