Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
HAT2287WP-EL-E
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RFQ
713
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Renesas Electronics America MOSFET N-CH WPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerWDFN 8-WPAK 30W (Tc) N-Channel 200V 17A (Ta) 94 mOhm @ 8.5A, 10V 26nC @ 10V 1200pF @ 25V 10V ±30V
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Per Unit
$1.39
RFQ
3,221
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Renesas Electronics America MOSFET N-CH 150V WPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN WPAK(3F) (5x6) 65W (Tc) N-Channel 150V 25A (Ta) 58 mOhm @ 12.5A, 10V 19nC @ 10V 1200pF @ 25V 10V ±30V
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Per Unit
$1.21
RFQ
1,869
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Renesas Electronics America MOSFET N-CH 200V 20A WPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN WPAK(3F) (5x6) 65W (Tc) N-Channel 200V 20A (Ta) 85 mOhm @ 10A, 10V 19nC @ 10V 1200pF @ 25V 10V ±30V
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