Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJL6020DPK-00#T0
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1,504
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Renesas Electronics America MOSFET N-CH 600V 30A TO3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 200W (Tc) N-Channel 600V 30A (Ta) 210 mOhm @ 15A, 10V 130nC @ 10V 4750pF @ 25V 10V ±30V
RJL5020DPK-00#T0
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1,616
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Renesas Electronics America MOSFET N-CH 500V 38A TO3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 200W (Tc) N-Channel 500V 38A (Ta) 135 mOhm @ 19A, 10V 140nC @ 10V 4750pF @ 25V 10V ±30V
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