Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJK0601DPN-E0#T2
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RFQ
1,690
Ships today + free overnight shipping
Renesas Electronics America MOSFET N-CH 60V 110A TO220 - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel 60V 110A (Ta) 3.1 mOhm @ 55A, 10V 141nC @ 10V 10000pF @ 10V 10V ±20V
RJK1001DPP-E0#T2
Per Unit
$3.55
RFQ
950
Ships today + free overnight shipping
Renesas Electronics America MOSFET N-CH 100V 80A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel 100V 80A (Ta) 5.5 mOhm @ 40A, 10V 147nC @ 10V 10000pF @ 10V 10V ±20V
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