Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STD7N90K5
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RFQ
2,385
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STMicroelectronics N-CHANNEL 800 V, 0.75 OHM TYP., MDmesh™ K5 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 110W (Tc) N-Channel - 900V 7A (Tc) - 5V @ 100µA - - 10V ±30V
STD4N90K5
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RFQ
2,802
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STMicroelectronics N-CHANNEL 900 V, 0.25 OHM TYP., MDmesh™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel - 900V 3A (Tc) 2.1 Ohm @ 1A, 10V 5V @ 100µA 5.3nC @ 10V 173pF @ 100V 10V ±30V
STD6N90K5
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RFQ
1,551
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STMicroelectronics N-CHANNEL 900 V, 2.1 OHM TYP., 3 MDmesh™ K5 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 110W (Tc) N-Channel - 900V 6A (Tc) 1.1 Ohm @ 3A, 10V 5V @ 100µA - - 10V ±30V
STD3NK90ZT4
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RFQ
3,743
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STMicroelectronics MOSFET N-CH 900V 3A DPAK SuperMESH™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 90W (Tc) N-Channel - 900V 3A (Tc) 4.8 Ohm @ 1.5A, 10V 4.5V @ 50µA 22.7nC @ 10V 590pF @ 25V 10V ±30V
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