Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STW23NM50N
Per Unit
$3.52
RFQ
1,003
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 500V 17A TO-247 MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 125W (Tc) N-Channel - 500V 17A (Tc) 190 mOhm @ 8.5A, 10V 4V @ 250µA 45nC @ 10V 1330pF @ 50V 10V ±25V
STW24NM60N
Per Unit
$6.66
RFQ
1,106
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 600V 17A TO247 MDmesh™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 125W (Tc) N-Channel - 600V 17A (Tc) 190 mOhm @ 8A, 10V 4V @ 250µA 46nC @ 10V 1400pF @ 50V 10V ±30V
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