- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,072
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STMicroelectronics | MOSFET N-CH 650V 13A I2SPAK | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 190W (Tc) | N-Channel | - | 650V | 13A (Tc) | 500 mOhm @ 6.5A, 10V | 4.5V @ 100µA | 89nC @ 10V | 2750pF @ 25V | 10V | ±30V | ||
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1,199
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STMicroelectronics | MOSFET N-CH 650V 13A TO-220 | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 190W (Tc) | N-Channel | - | 650V | 13A (Tc) | 500 mOhm @ 6.5A, 10V | 4.5V @ 100µA | 89nC @ 10V | 2750pF @ 25V | 10V | ±30V | |||
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2,278
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STMicroelectronics | MOSFET N-CH 600V 13A I2PAK FP | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 35W (Tc) | N-Channel | - | 600V | 13A (Tc) | 550 mOhm @ 4.5A, 10V | 4.5V @ 100µA | 92nC @ 10V | 2030pF @ 25V | 10V | ±30V |
