- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,756
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STMicroelectronics | MOSFET N-CH 650V 12A TO-220FP | MDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 650V | 12A (Tc) | 380 mOhm @ 6A, 10V | 4V @ 250µA | 33.3nC @ 10V | 983pF @ 50V | 10V | ±25V | ||||
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1,061
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STMicroelectronics | MOSFET N-CH 650V 19A TO-220FP | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 650V | 19A (Tc) | 190 mOhm @ 9.5A, 10V | 4V @ 250µA | 70nC @ 10V | 2500pF @ 50V | 10V | ±25V | |||
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3,013
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STMicroelectronics | MOSFET N-CH 650V 12A TO-220FP | MDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 650V | 12A (Tc) | 380 mOhm @ 6A, 10V | 4V @ 250µA | 33.3nC @ 10V | 983pF @ 50V | 10V | ±25V |