Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STU7N60M2
Per Unit
$1.46
RFQ
2,813
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 600V IPAK MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 60W (Tc) N-Channel - 600V 5A (Tc) 950 mOhm @ 2.5A, 10V 4V @ 250µA 8.8nC @ 10V 271pF @ 100V 10V ±25V
STU6N60M2
Per Unit
$0.55
RFQ
2,116
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 600V IPAK MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 60W (Tc) N-Channel - 600V 4.5A (Tc) 1.2 Ohm @ 2.25A, 10V 4V @ 250µA 13.5nC @ 10V 232pF @ 100V 10V ±25V
STU9HN65M2
Per Unit
$1.21
RFQ
2,317
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 650V 5.5A IPAK MDmesh™ M2 Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 60W (Tc) N-Channel - 650V 5.5A (Tc) 820 mOhm @ 2.5A, 10V 4V @ 250µA 11.5nC @ 10V 325pF @ 100V 10V ±25V
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