Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STW13NM60N
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RFQ
3,573
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STMicroelectronics MOSFET N-CH 600V 11A TO-247 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 90W (Tc) N-Channel - 600V 11A (Tc) 360 mOhm @ 5.5A, 10V 4V @ 250µA 30nC @ 10V 790pF @ 50V 10V ±25V
STW13NM50N
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RFQ
2,966
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STMicroelectronics MOSFET N-CH 500V 12A TO-247 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 100W (Tc) N-Channel - 500V 12A (Tc) 320 mOhm @ 6A, 10V 4V @ 250µA 30nC @ 10V 960pF @ 50V 10V ±25V
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