Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STW70N10F4
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RFQ
3,883
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STMicroelectronics MOSFET N-CH 100V 65A TO-247 DeepGATE™, STripFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 150W (Tc) N-Channel - 100V 65A (Tc) 19.5 mOhm @ 30A, 10V 4V @ 250µA 85nC @ 10V 5800pF @ 25V 10V ±20V
STW160N75F3
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RFQ
1,036
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STMicroelectronics MOSFET N-CH 75V 120A TO-247 STripFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 330W (Tc) N-Channel - 75V 120A (Tc) 4 mOhm @ 60A, 10V 4V @ 250µA 85nC @ 10V 6750pF @ 25V 10V ±20V
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