- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,417
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | MOSFET N-CH 800V 9.5A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 48W (Tc) | N-Channel | 800V | 9.5A (Tc) | 1.05 Ohm @ 4.75A, 10V | 4V @ 250µA | 53nC @ 10V | 2336pF @ 25V | 10V | ±30V | |||
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3,153
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | MOSFET N-CH 800V 9.5A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 48W (Tc) | N-Channel | 800V | 9.5A (Tc) | 1.05 Ohm @ 4.75A, 10V | 4V @ 250µA | 53nC @ 10V | 2336pF @ 25V | 10V | ±30V | |||
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3,077
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | MOSFET N-CH 600V 9.5A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 83W (Tc) | N-Channel | 600V | 9.5A (Tc) | 380 mOhm @ 2.85A, 10V | 4V @ 250µA | 19.4nC @ 10V | 795pF @ 100V | 10V | ±30V |
