- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,070
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 2A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 52.1W (Tc) | N-Channel | 600V | 2A (Tc) | 4 Ohm @ 1A, 10V | 5V @ 250µA | 9.5nC @ 10V | 362pF @ 25V | 10V | ±30V | ||||
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1,021
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | MOSFET N-CH 800V 300MA SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2.1W (Tc) | N-Channel | 800V | 300mA (Ta) | 21.6 Ohm @ 150mA, 10V | 5V @ 250µA | 6nC @ 10V | 200pF @ 25V | 10V | ±30V | ||||
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1,480
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 4A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 86.2W (Tc) | N-Channel | 600V | 4A (Tc) | 2.5 Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | 545pF @ 25V | 10V | ±30V |