Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM4800N15CX6 RFG
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RFQ
2,917
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Taiwan Semiconductor Corporation MOSFET N-CH 150V 1.4A SOT26 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 2.1W (Tc) N-Channel 150V 1.4A (Tc) 480 mOhm @ 1.1A, 10V 3.5V @ 250µA 8nC @ 10V 332pF @ 10V 6V, 10V ±20V
TSM650N15CR RLG
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RFQ
1,346
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Taiwan Semiconductor Corporation MOSFET N-CH 150V 24A 8PDFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 96W (Tc) N-Channel 150V 24A (Tc) 65 mOhm @ 4A, 10V 4V @ 250µA 36nC @ 10V 1829pF @ 75V 6V, 10V ±20V
TSM650N15CS RLG
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RFQ
3,277
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 150V 9A 8SOP - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 12.5W (Tc) N-Channel 150V 9A (Tc) 65 mOhm @ 4A, 10V 4V @ 250µA 37nC @ 10V 1783pF @ 75V 6V, 10V ±20V
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