Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TK35S04K3L(T6L1,NQ
Per Unit
$0.53
RFQ
1,300
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N-CH 40V 35A DPAK-3 U-MOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK+ 58W (Tc) N-Channel - 40V 35A (Ta) 10.3 mOhm @ 17.5A, 10V 3V @ 1mA 28nC @ 10V 1370pF @ 10V 6V, 10V ±20V
TK30S06K3L(T6L1,NQ
Per Unit
$0.53
RFQ
2,882
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N-CH 60V 30A DPAK-3 U-MOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK+ 58W (Tc) N-Channel - 60V 30A (Ta) 18 Ohm @ 15A, 10V 3V @ 1mA 28nC @ 10V 1350pF @ 10V 6V, 10V ±20V
TK33S10N1Z,LQ
Per Unit
$0.65
RFQ
1,127
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N-CH 100V 33A DPAK U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK+ 125W (Tc) N-Channel - 100V 33A (Ta) 9.7 mOhm @ 16.5A, 10V 4V @ 500µA 28nC @ 10V 2050pF @ 10V 10V ±20V
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