Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF1010EZL
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RFQ
610
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Infineon Technologies MOSFET N-CH 60V 75A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 140W (Tc) N-Channel - 60V 75A (Tc) 8.5 mOhm @ 51A, 10V 4V @ 100µA 86nC @ 10V 2810pF @ 25V 10V ±20V
IRFSL23N20D102P
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RFQ
1,147
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Infineon Technologies MOSFET N-CH 200V 24A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 170W (Tc) N-Channel - 200V 24A (Tc) 100 mOhm @ 14A, 10V 5.5V @ 250µA 86nC @ 10V 1960pF @ 25V 10V ±30V
IRF1010EZLPBF
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RFQ
3,735
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Infineon Technologies MOSFET N-CH 60V 75A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 140W (Tc) N-Channel - 60V 75A (Tc) 8.5 mOhm @ 51A, 10V 4V @ 100µA 86nC @ 10V 2810pF @ 25V 10V ±20V
IRFSL23N20D
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RFQ
3,929
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 200V 24A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 170W (Tc) N-Channel - 200V 24A (Tc) 100 mOhm @ 14A, 10V 5.5V @ 250µA 86nC @ 10V 1960pF @ 25V 10V ±30V
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