- Series :
- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,944
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Microsemi Corporation | MOSFET N-CH 1000V 45A SOT-227 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 960W (Tc) | N-Channel | 1000V | 45A (Tc) | 180 mOhm @ 33A, 10V | 5V @ 2.5mA | 570nC @ 10V | 18500pF @ 25V | 10V | ±30V | ||
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3,094
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Vishay Semiconductor Diodes Division | MOSFET N-CH 500V 57A SOT-227 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 625W (Tc) | N-Channel | 500V | 57A (Tc) | 80 mOhm @ 34A, 10V | 4V @ 250µA | 338nC @ 10V | 10000pF @ 25V | 10V | ±20V | ||
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3,128
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Vishay Semiconductor Diodes Division | MOSFET N-CH 500V 38A SOT-227 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 500W (Tc) | N-Channel | 500V | 38A (Tc) | 130 mOhm @ 23A, 10V | 4V @ 250µA | 420nC @ 10V | 6900pF @ 25V | 10V | ±20V | ||
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2,573
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Microsemi Corporation | MOSFET N-CH 1200V 34A SOT-227 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 960W (Tc) | N-Channel | 1200V | 35A (Tc) | 300 mOhm @ 25A, 10V | 5V @ 2.5mA | 560nC @ 10V | 18200pF @ 25V | 10V | ±30V | |||
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1,771
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Microsemi Corporation | MOSFET N-CH 800V 58A SOT-227 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 960W (Tc) | N-Channel | 800V | 60W (Tc) | 110 mOhm @ 43A, 10V | 5V @ 5mA | 570nC @ 10V | 17550pF @ 25V | 10V | ±30V | |||
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738
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Microsemi Corporation | MOSFET N-CH 500V 100A SOT-227 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 960W (Tc) | N-Channel | 500V | 103A (Tc) | 38 mOhm @ 75A, 10V | 5V @ 5mA | 620nC @ 10V | 24600pF @ 25V | 10V | ±30V | |||
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2,764
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Vishay Semiconductor Diodes Division | MOSFET N-CH 100V 180A SOT-227 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 480W (Tc) | N-Channel | 100V | 180A (Tc) | 6.5 mOhm @ 108A, 10V | 4V @ 250µA | 380nC @ 10V | 10700pF @ 25V | 10V | ±20V | ||
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833
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Vishay Semiconductor Diodes Division | MOSFET N-CH 100V 190A SOT227 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 568W (Tc) | N-Channel | 100V | 190A | 6.5 mOhm @ 180A, 10V | 4.35V @ 250µA | 250nC @ 10V | 10700pF @ 25V | 10V | ±20V | |||
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2,664
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IXYS | MOSFET N-CH 650V 76A X2 SOT-227 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 595AW (Tc) | N-Channel | 650V | 76A (Tc) | 30 mOhm @ 51A, 10V | 5V @ 250µA | 152nC @ 10V | 10900pF @ 25V | 10V | ±30V |
