- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,613
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Texas Instruments | MOSFET N-CH 40V 100A TO220-3 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 188W (Tc) | N-Channel | - | 40V | 100A (Tc) | 4.5 mOhm @ 75A, 10V | 2.3V @ 250µA | 36nC @ 10V | 3150pF @ 20V | 4.5V, 10V | ±20V | |||
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3,934
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Texas Instruments | MOSFET N-CH 40V TO220-3 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 115W (Tc) | N-Channel | - | 40V | 53A (Ta), 100A (Tc) | 7 mOhm @ 40A, 10V | 2.3V @ 250µA | 25nC @ 10V | 1800pF @ 20V | 4.5V, 10V | ±20V | |||
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1,526
Ships today + free overnight shipping
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Texas Instruments | MOSFET N-CH 60V 50A TO220-3 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 94W (Tc) | N-Channel | - | 60V | 50A (Tc) | 14 mOhm @ 25A, 10V | 3.5V @ 250µA | 18nC @ 10V | 1480pF @ 30V | 6V, 10V | ±20V |