Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
CSD18503KCS
Per Unit
$1.62
RFQ
1,613
Ships today + free overnight shipping
Texas Instruments MOSFET N-CH 40V 100A TO220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 188W (Tc) N-Channel - 40V 100A (Tc) 4.5 mOhm @ 75A, 10V 2.3V @ 250µA 36nC @ 10V 3150pF @ 20V 4.5V, 10V ±20V
CSD18504KCS
Per Unit
$1.42
RFQ
3,934
Ships today + free overnight shipping
Texas Instruments MOSFET N-CH 40V TO220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 115W (Tc) N-Channel - 40V 53A (Ta), 100A (Tc) 7 mOhm @ 40A, 10V 2.3V @ 250µA 25nC @ 10V 1800pF @ 20V 4.5V, 10V ±20V
CSD18537NKCS
Per Unit
$1.26
RFQ
1,526
Ships today + free overnight shipping
Texas Instruments MOSFET N-CH 60V 50A TO220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 94W (Tc) N-Channel - 60V 50A (Tc) 14 mOhm @ 25A, 10V 3.5V @ 250µA 18nC @ 10V 1480pF @ 30V 6V, 10V ±20V
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