Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STD8NM60N-1
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RFQ
2,915
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STMicroelectronics MOSFET N-CH 600V 7A IPAK MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 70W (Tc) N-Channel - 600V 7A (Tc) 650 mOhm @ 3.5A, 10V 4V @ 250µA 19nC @ 10V 560pF @ 50V 10V ±25V
STD7NM50N-1
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RFQ
2,471
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STMicroelectronics MOSFET N-CH 500V 5A IPAK MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 500V 5A (Tc) 780 mOhm @ 2.5A, 10V 4V @ 250µA 12nC @ 10V 400pF @ 50V 10V ±25V
STU10NM60N
Per Unit
$1.26
RFQ
1,076
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STMicroelectronics MOSFET N-CH 600V 10A IPAK MDmesh™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 70W (Tc) N-Channel - 600V 10A (Tc) 550 mOhm @ 4A, 10V 4V @ 250µA 19nC @ 10V 540pF @ 50V 10V ±25V
STD6NM60N-1
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RFQ
1,731
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STMicroelectronics MOSFET N-CH 600V 4.6A IPAK MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 600V 4.6A (Tc) 920 mOhm @ 2.3A, 10V 4V @ 250µA 13nC @ 10V 420pF @ 50V 10V ±25V
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