- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,765
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 800V 1.5A IPAK | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 13W (Tc) | N-Channel | Super Junction | 800V | 1.5A (Tc) | 1.4 Ohm @ 1.4A, 10V | 3.5V @ 200µA | 4nC @ 10V | 250pF @ 500V | 10V | ±20V | |||
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1,295
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 800V 4A IPAK | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 32W (Tc) | N-Channel | Super Junction | 800V | 4A (Tc) | 1.4 Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10.05nC @ 10V | 250pF @ 500V | 10V | ±20V |
