- Manufacture :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,391
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ON Semiconductor | MOSFET N-CH 500V 1.6A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 30W (Tc) | N-Channel | - | 500V | 1.6A (Tc) | 5.3 Ohm @ 800mA, 10V | 3.7V @ 250µA | 8nC @ 10V | 230pF @ 25V | 10V | ±30V | ||
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2,249
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IXYS | MOSFET N-CH 800V 0.1A TO-251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 | 25W (Tc) | N-Channel | - | 800V | 100mA (Tc) | 50 Ohm @ 100mA, 10V | 4.5V @ 25µA | 8nC @ 10V | 60pF @ 25V | 10V | ±20V | |||
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2,858
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ON Semiconductor | MOSFET P-CH 200V 2.4A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 37W (Tc) | P-Channel | - | 200V | 2.4A (Tc) | 2.7 Ohm @ 1.2A, 10V | 5V @ 250µA | 8nC @ 10V | 250pF @ 25V | 10V | ±30V | ||
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803
Ships today + free overnight shipping
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ON Semiconductor | MOSFET N-CH 500V 1.6A IPAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 30W (Tc) | N-Channel | - | 500V | 1.6A (Tc) | 5.3 Ohm @ 800mA, 10V | 3.7V @ 250µA | 8nC @ 10V | 230pF @ 25V | 10V | ±30V |
