- Series :
- Part Status :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
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- Input Capacitance (Ciss) (Max) @ Vds :
11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,735
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ON Semiconductor | MOSFET N-CH 500V 11A TO-220 | FRFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 195W (Tc) | N-Channel | - | 500V | 11A (Tc) | 550 mOhm @ 5.5A, 10V | 4V @ 250µA | 55nC @ 10V | 2055pF @ 25V | 10V | ±30V | ||
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1,313
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 1000V 4A TO247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 195W (Tc) | N-Channel | - | 1000V | 4A (Tc) | 4.2 Ohm @ 2.5A, 10V | 4.5V @ 250µA | 23nC @ 10V | 1150pF @ 25V | 10V | ±30V | |||
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2,257
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 1000V 4A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 195W (Tc) | N-Channel | - | 1000V | 4A (Tc) | 4.2 Ohm @ 2.5A, 10V | 4.5V @ 250µA | 23nC @ 10V | 1150pF @ 25V | 10V | ±30V | |||
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1,309
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ON Semiconductor | IC POWER MANAGEMENT | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 195W (Tc) | N-Channel | - | 500V | 13A (Tc) | 480 mOhm @ 6.5A, 10V | 4V @ 250µA | 56nC @ 10V | 2055pF @ 25V | 10V | ±30V | ||
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1,630
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 1000V 4A TO247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 195W (Tc) | N-Channel | - | 1000V | 4A (Tc) | 4.2 Ohm @ 2.5A, 10V | 4.5V @ 250µA | 23nC @ 10V | 1150pF @ 25V | 10V | ±30V | |||
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1,860
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ON Semiconductor | MOSFET N-CH 500V 13A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 195W (Tc) | N-Channel | - | 500V | 13A (Tc) | 480 mOhm @ 6.5A, 10V | 4V @ 250µA | 56nC @ 10V | 2055pF @ 25V | 10V | ±30V | |||
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3,107
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IXYS | 2000V TO 3000V POLAR3 POWER MOSF | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 195W (Tc) | N-Channel | - | 3000V | 1A (Tc) | 50 Ohm @ 500mA, 10V | 4V @ 250µA | 30.6nC @ 10V | 895pF @ 25V | 10V | ±20V | |||
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1,666
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IXYS | 2000V TO 3000V POLAR3 POWER MOSF | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | TO-247HV | 195W (Tc) | N-Channel | - | 3000V | 1A (Tc) | 50 Ohm @ 500mA, 10V | 4V @ 250µA | 30.6nC @ 10V | 895pF @ 25V | 10V | ±20V | |||
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2,870
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ON Semiconductor | MOSFET N-CH 500V 13A I2PAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 195W (Tc) | N-Channel | - | 500V | 13A (Tc) | 480 mOhm @ 6.5A, 10V | 4V @ 250µA | 56nC @ 10V | 2055pF @ 25V | 10V | ±30V | |||
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1,583
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Infineon Technologies | MOSFET N-CH 30V 160A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 195W (Tc) | N-Channel | - | 30V | 160A (Tc) | 1.95 mOhm @ 148A, 10V | 2.35V @ 150µA | 83nC @ 4.5V | 8020pF @ 25V | 10V | ±20V | |||
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1,871
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ON Semiconductor | MOSFET N-CH 800V 14A TO220 | SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 195W (Tc) | N-Channel | - | 800V | 14A (Tc) | 400 mOhm @ 5.5A, 10V | 4.5V @ 1.1mA | 56nC @ 10V | 2350pF @ 1000V | 10V | ±20V |
