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- Series :
- Part Status :
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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,461
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Infineon Technologies | MOSFET N-CH 30V 18A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.1W (Ta) | N-Channel | - | 30V | 18A (Ta) | 6.5 mOhm @ 15A, 4.5V | 1V @ 250µA | 60nC @ 5V | 5500pF @ 16V | 4.5V | ±12V | ||
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845
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STMicroelectronics | MOSFET N-CH 200V 18A TO220FP | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 200V | 18A (Ta) | 125 mOhm @ 10A, 10V | 4V @ 250µA | 39nC @ 10V | 940pF @ 25V | 10V | ±20V | ||
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2,116
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Infineon Technologies | MOSFET N-CH 30V 18A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 18A (Ta) | 4.8 mOhm @ 18A, 10V | 2.35V @ 50µA | 26nC @ 4.5V | 2315pF @ 15V | 4.5V, 10V | ±20V | |||
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3,156
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Infineon Technologies | MOSFET N-CH 40V 18A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 40V | 18A (Ta) | 5 mOhm @ 17A, 10V | 2.25V @ 250µA | 50nC @ 4.5V | 4500pF @ 20V | 4.5V, 10V | ±20V |
