Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NDF11N50ZG
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RFQ
1,585
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ON Semiconductor MOSFET N-CH 500V 12A TO-220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 39W (Tc) N-Channel - 500V 12A (Tc) 520 mOhm @ 4.5A, 10V 4.5V @ 100µA 69nC @ 10V 1645pF @ 25V 10V ±30V
STP11NK50Z
Per Unit
$1.09
RFQ
2,572
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STMicroelectronics MOSFET N-CH 500V 10A TO-220 SuperMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel - 500V 10A (Tc) 520 mOhm @ 4.5A, 10V 4.5V @ 100µA 68nC @ 10V 1390pF @ 25V 10V ±30V
NDF11N50ZH
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RFQ
1,633
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 500V 12A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 39W (Tc) N-Channel - 500V 12A (Tc) 520 mOhm @ 4.5A, 10V 4.5V @ 100µA 69nC @ 10V 1645pF @ 25V 10V ±30V
STP11NK50ZFP
Per Unit
$2.29
RFQ
2,523
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 500V 10A TO-220FP SuperMESH™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 500V 10A (Tc) 520 mOhm @ 4.5A, 10V 4.5V @ 100µA 68nC @ 10V 1390pF @ 25V 10V ±30V
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