Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQP19N20L
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RFQ
1,135
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ON Semiconductor MOSFET N-CH 200V 21A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 140W (Tc) N-Channel 200V 21A (Tc) 140 mOhm @ 10.5A, 10V 2V @ 250µA 35nC @ 5V 2200pF @ 25V 5V, 10V ±20V
IRFS654B_FP001
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RFQ
1,707
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ON Semiconductor MOSFET N-CH 250V 21A TO-220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 50W (Tc) N-Channel 250V 21A (Tc) 140 mOhm @ 10.5A, 10V 4V @ 250µA 123nC @ 10V 3400pF @ 25V 10V ±30V
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