- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,514
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Diodes Incorporated | MOSFET N-CH 650V 9A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 165W (Tc) | N-Channel | 650V | 9A (Tc) | 1.3 Ohm @ 4.5A, 10V | 5V @ 250µA | 39nC @ 10V | 2310pF @ 25V | 10V | ±30V | |||
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2,698
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 900V 9A TO220F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 50W (Tc) | N-Channel | 900V | 9A (Tc) | 1.3 Ohm @ 4.5A, 10V | 4.5V @ 250µA | 58nC @ 10V | 2560pF @ 25V | 10V | ±30V | |||
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859
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Diodes Incorporated | MOSFET N CH 650V 9A ITO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | 13W (Tc) | N-Channel | 650V | 9A (Tc) | 1.3 Ohm @ 4.5A, 10V | 5V @ 250µA | 39nC @ 10V | 2310pF @ 25V | 10V | ±30V | |||
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3,051
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 900V 9A TO247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 368W (Tc) | N-Channel | 900V | 9A (Tc) | 1.3 Ohm @ 4.5A, 10V | 4.5V @ 250µA | 58nC @ 10V | 2560pF @ 25V | 10V | ±30V |