- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,325
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 900V 6.9A TO-247 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 104W (Tc) | N-Channel | - | 900V | 6.9A (Tc) | 800 mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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3,464
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 900V 6.9A TO-262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104W (Tc) | N-Channel | - | 900V | 6.9A (Tc) | 800 mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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615
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 900V 6.9A TO-220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 104W (Tc) | N-Channel | - | 900V | 6.9A (Tc) | 800 mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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3,512
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 900V 6.9A TO220-3 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 33W (Tc) | N-Channel | - | 900V | 6.9A (Tc) | 800 mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42nC @ 10V | 1100pF @ 100V | 10V | ±20V |
