- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,595
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Microsemi Corporation | MOSFET N-CH 1000V 8A TO247AD | POWER MOS IV® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD | 240W (Tc) | N-Channel | 1000V | 8A (Tc) | 1.6 Ohm @ 4A, 10V | 4V @ 1mA | 105nC @ 10V | 1800pF @ 25V | 10V | ±30V | ||
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792
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Vishay Siliconix | MOSFET N-CH 900V 6.7A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | 900V | 6.7A (Tc) | 1.6 Ohm @ 4A, 10V | 4V @ 250µA | 200nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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3,359
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Central Semiconductor Corp | MOSFET N-CH 8A 800V TO-220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 57W (Tc) | N-Channel | 800V | 8A (Tc) | 1.6 Ohm @ 4A, 10V | 4V @ 250µA | 24.45nC @ 10V | 1110pF @ 25V | 10V | 30V | |||
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3,213
Ships today + free overnight shipping
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Vishay Siliconix | MOSFET N-CH 900V 6.7A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 190W (Tc) | N-Channel | 900V | 6.7A (Tc) | 1.6 Ohm @ 4A, 10V | 4V @ 250µA | 200nC @ 10V | 2900pF @ 25V | 10V | ±20V |
