Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFR18N90P
Per Unit
$9.65
RFQ
2,845
Ships today + free overnight shipping
IXYS MOSFET N-CH 900V ISOPLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 200W (Tc) N-Channel - 900V 10.5A (Tc) 660 mOhm @ 9A, 10V 6V @ 1mA 97nC @ 10V 5230pF @ 25V 10V ±30V
IXFT18N100Q3
Per Unit
$13.70
RFQ
3,968
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 18A TO-268 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 830W (Tc) N-Channel - 1000V 18A (Tc) 660 mOhm @ 9A, 10V 6.5V @ 4mA 90nC @ 10V 4890pF @ 25V 10V ±30V
IXFH18N100Q3
Per Unit
$12.40
RFQ
3,265
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 18A TO-247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 830W (Tc) N-Channel - 1000V 18A (Tc) 660 mOhm @ 9A, 10V 6.5V @ 4mA 90nC @ 10V 4890pF @ 25V 10V ±30V
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