Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
AOTF42S60L
Per Unit
$5.76
RFQ
3,770
Ships today + free overnight shipping
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 39A TO220F aMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 37.9W (Tc) N-Channel - 600V 39A (Tc) 99 mOhm @ 21A, 10V 3.8V @ 250µA 40nC @ 10V 2154pF @ 100V 10V ±30V
AOK42S60L
Per Unit
$5.66
RFQ
3,856
Ships today + free overnight shipping
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 39A TO247 aMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 417W (Tc) N-Channel - 600V 39A (Tc) 99 mOhm @ 21A, 10V 3.8V @ 250µA 40nC @ 10V 2154pF @ 100V 10V ±30V
AOT42S60L
Per Unit
$5.35
RFQ
3,086
Ships today + free overnight shipping
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 39A TO220 aMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 417W (Tc) N-Channel - 600V 37A (Tc) 99 mOhm @ 21A, 10V 3.8V @ 250µA 40nC @ 10V 2154pF @ 100V 10V ±30V
Page 1 / 1