- Manufacture :
- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,458
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NXP USA Inc. | MOSFET N-CH 110V 20.8A SOT186A | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 50W (Tc) | N-Channel | - | 110V | 20.8A (Tc) | 50 mOhm @ 14A, 10V | 4V @ 1mA | 30nC @ 10V | 1240pF @ 25V | 10V | ±20V | ||
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3,646
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ON Semiconductor | MOSFET N-CH 900V 4.2A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 140W (Tc) | N-Channel | - | 900V | 4.2A (Tc) | 3.3 Ohm @ 2.1A, 10V | 5V @ 250µA | 30nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||
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3,692
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ON Semiconductor | MOSFET N-CH 600V 7A TO-220 | SuperFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 83W (Tc) | N-Channel | - | 600V | 7A (Tc) | 600 mOhm @ 3.5A, 10V | 5V @ 250µA | 30nC @ 10V | 920pF @ 25V | 10V | ±30V | ||
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1,710
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ON Semiconductor | MOSFET N-CH 500V 11.5A TO-220 | UniFET-II™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 170W (Tc) | N-Channel | - | 500V | 11.5A (Tc) | 520 mOhm @ 5.75A, 10V | 5V @ 250µA | 30nC @ 10V | 1235pF @ 25V | 10V | ±25V | |||
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1,657
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ON Semiconductor | MOSFET N-CH 800V 5.5A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 158W (Tc) | N-Channel | - | 800V | 5.5A (Tc) | 2.5 Ohm @ 2.75A, 10V | 5V @ 250µA | 30nC @ 10V | 1310pF @ 25V | 10V | ±30V | |||
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1,409
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ON Semiconductor | MOSFET N-CH 500V 11.5A TO-220 | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 165W (Tc) | N-Channel | - | 500V | 11.5A (Tc) | 650 mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | 1315pF @ 25V | 10V | ±30V | |||
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2,320
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ON Semiconductor | MOSFET N-CH 600V 7A TO-220 | SuperFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 83W (Tc) | N-Channel | - | 600V | 7A (Tc) | 600 mOhm @ 3.5A, 10V | 5V @ 250µA | 30nC @ 10V | 920pF @ 25V | 10V | ±30V | |||
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2,347
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STMicroelectronics | MOSFET N-CH 600V 11A TO-220 | MDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 90W (Tc) | N-Channel | - | 600V | 11A (Tc) | 360 mOhm @ 5.5A, 10V | 4V @ 250µA | 30nC @ 10V | 790pF @ 50V | 10V | ±25V | |||
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1,391
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ON Semiconductor | MOSFET N-CH 600V 10A TO-220 | UniFET-II™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 185W (Tc) | N-Channel | - | 600V | 10A (Tc) | 750 mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | 1475pF @ 25V | 10V | ±25V |
