- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
17 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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713
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ON Semiconductor | MOSFET N-CH 200V 9A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Cropped Leads | TO-220-3 | 72W (Tc) | N-Channel | - | 200V | 9A (Tc) | 400 mOhm @ 4.5A, 10V | 4V @ 250µA | 29nC @ 10V | 720pF @ 25V | 10V | ±30V | ||
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685
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Vishay Siliconix | MOSFET P-CH 200V 6.5A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 200V | 6.5A (Tc) | 800 mOhm @ 3.9A, 10V | 4V @ 250µA | 29nC @ 10V | 700pF @ 25V | 10V | ±20V | ||
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1,784
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ON Semiconductor | MOSFET N-CH 200V 9A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 72W (Tc) | N-Channel | - | 200V | 9A (Tc) | 400 mOhm @ 4.5A, 10V | 4V @ 250µA | 29nC @ 10V | 720pF @ 25V | 10V | ±30V | ||
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3,011
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Infineon Technologies | MOSFET N-CH 600V 11A I2PAK | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 96W (Tc) | N-Channel | - | 600V | 11A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | 1100pF @ 100V | 10V | ±20V | ||
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3,227
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STMicroelectronics | MOSFET N-CH 800V 12A I2PAK-FP | MDmesh™ K5 | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 35W (Tc) | N-Channel | - | 800V | 12A (Tc) | 450 mOhm @ 6A, 10V | 5V @ 100µA | 29nC @ 10V | 870pF @ 100V | 10V | ±30V | ||
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3,973
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Vishay Siliconix | MOSFET P-CH 200V 6.5A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 74W (Tc) | P-Channel | - | 200V | 6.5A (Tc) | 800 mOhm @ 3.9A, 10V | 4V @ 250µA | 29nC @ 10V | 700pF @ 25V | 10V | ±20V | ||
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3,973
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ON Semiconductor | MOSFET N-CH 600V 4.8A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 600V | 4.8A (Tc) | 2 Ohm @ 2A, 10V | 4.5V @ 50µA | 29nC @ 10V | 640pF @ 25V | 10V | ±30V | ||
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1,655
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ON Semiconductor | MOSFET N-CH 600V 4A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 83W (Tc) | N-Channel | - | 600V | 4.1A (Tc) | 2 Ohm @ 2A, 10V | 4.5V @ 50µA | 29nC @ 10V | 640pF @ 25V | 10V | ±30V | ||
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1,474
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ON Semiconductor | MOSFET N-CH 600V 4.8A TO-220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 600V | 4.8A (Tc) | 2 Ohm @ 2A, 10V | 4.5V @ 50µA | 29nC @ 10V | 640pF @ 25V | 10V | ±30V | ||
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1,208
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Infineon Technologies | MOSFET N-CH 30V 33A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 57W (Tc) | N-Channel | - | 30V | 33A (Tc) | 31 mOhm @ 18A, 10V | 4V @ 250µA | 29nC @ 10V | 750pF @ 25V | 10V | ±20V | ||
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2,594
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|
IXYS | MOSFET N-CH 500V 12A I2-PAK | Polar™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 (I2PAK) | 200W (Tc) | N-Channel | - | 500V | 12A (Tc) | 500 mOhm @ 6A, 10V | 5.5V @ 250µA | 29nC @ 10V | 1830pF @ 25V | 10V | ±30V | ||
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1,841
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Infineon Technologies | MOSFET N-CH 30V 33A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 57W (Tc) | N-Channel | - | 30V | 33A (Tc) | 31 mOhm @ 18A, 10V | 4V @ 250µA | 29nC @ 10V | 750pF @ 25V | 10V | ±20V | ||
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2,947
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Infineon Technologies | MOSFET N-CH 30V 33A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 57W (Tc) | N-Channel | - | 30V | 33A (Tc) | 31 mOhm @ 18A, 10V | 4V @ 250µA | 29nC @ 10V | 750pF @ 25V | 10V | ±20V | ||
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1,553
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Infineon Technologies | MOSFET N-CH 30V 33A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 57W (Tc) | N-Channel | - | 30V | 33A (Tc) | 31 mOhm @ 18A, 10V | 4V @ 250µA | 29nC @ 10V | 750pF @ 25V | 10V | ±20V | ||
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GET PRICE |
3,288
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Vishay Siliconix | MOSFET P-CH 200V 4.3A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 35W (Tc) | P-Channel | - | 200V | 4.3A (Tc) | 800 mOhm @ 2.6A, 10V | 4V @ 250µA | 29nC @ 10V | 700pF @ 25V | 10V | ±20V | ||
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GET PRICE |
1,444
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Vishay Siliconix | MOSFET P-CH 200V 6.5A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 74W (Tc) | P-Channel | - | 200V | 6.5A (Tc) | 800 mOhm @ 3.9A, 10V | 4V @ 250µA | 29nC @ 10V | 700pF @ 25V | 10V | ±20V | ||
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2,021
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STMicroelectronics | MOSFET N CH 600V 18A TO281 | MDmesh™ II Plus | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 30W (Tc) | N-Channel | - | 600V | 18A (Tc) | 190 mOhm @ 9A, 10V | 4V @ 250µA | 29nC @ 10V | 1060pF @ 100V | 10V | ±25V |
