Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFB17N60KPBF
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RFQ
3,416
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 600V 17A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220AB 340W (Tc) N-Channel - 600V 17A (Tc) 420 mOhm @ 10A, 10V 5V @ 250µA 99nC @ 10V 2700pF @ 25V 10V ±30V
IRFB17N60K
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RFQ
2,736
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 600V 17A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220AB 340W (Tc) N-Channel - 600V 17A (Tc) 420 mOhm @ 10A, 10V 5V @ 250µA 99nC @ 10V 2700pF @ 25V 10V ±30V
FDP2614
Per Unit
$3.33
RFQ
2,443
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 200V 62A TO-220 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 260W (Tc) N-Channel - 200V 62A (Tc) 27 mOhm @ 31A, 10V 5V @ 250µA 99nC @ 10V 7230pF @ 25V 10V ±30V
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