Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
APT14M120B
Per Unit
$12.48
RFQ
2,119
Ships today + free overnight shipping
Microsemi Corporation MOSFET N-CH 1200V 14A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 625W (Tc) N-Channel 1200V 14A (Tc) 1.2 Ohm @ 7A, 10V 5V @ 1mA 145nC @ 10V 4765pF @ 25V 10V ±30V
APT37F50B
Per Unit
$8.52
RFQ
3,753
Ships today + free overnight shipping
Microsemi Corporation MOSFET N-CH 500V 37A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 520W (Tc) N-Channel 500V 37A (Tc) 150 mOhm @ 18A, 10V 5V @ 1mA 145nC @ 10V 5710pF @ 25V 10V ±30V
APT13F120B
Per Unit
$11.65
RFQ
3,366
Ships today + free overnight shipping
Microsemi Corporation MOSFET N-CH 1200V 14A TO247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 625W (Tc) N-Channel 1200V 14A (Tc) 1.4 Ohm @ 7A, 10V 5V @ 1mA 145nC @ 10V 4765pF @ 25V 10V ±30V
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