- Manufacture :
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- Supplier Device Package :
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5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,714
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IXYS | MOSFET N-CH 1000V 1.5A TO-268 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 60W (Tc) | N-Channel | 1000V | 1.5A (Tc) | 11 Ohm @ 1A, 10V | 4.5V @ 25µA | 23nC @ 10V | 480pF @ 25V | 10V | ±20V | ||
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951
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ON Semiconductor | MOSFET N-CH 100V 8.4A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 32W (Tc) | N-Channel | 100V | 8.4A (Tc) | 200 mOhm @ 4.2A, 10V | 4V @ 250µA | 22nC @ 10V | 480pF @ 25V | 10V | - | ||
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3,235
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IXYS | MOSFET N-CH 1000V 1.5A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 60W (Tc) | N-Channel | 1000V | 1.5A (Tc) | 11 Ohm @ 1A, 10V | 4.5V @ 25µA | 23nC @ 10V | 480pF @ 25V | 10V | ±20V | |||
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3,752
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Vishay Siliconix | MOSFET P-CH 50V 9.7A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 40W (Tc) | P-Channel | 50V | 9.7A (Tc) | 280 mOhm @ 5.6A, 10V | 4V @ 250µA | 26nC @ 10V | 480pF @ 25V | 10V | ±20V | |||
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999
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Vishay Siliconix | MOSFET P-CH 50V 9.7A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 40W (Tc) | P-Channel | 50V | 9.7A (Tc) | 280 mOhm @ 5.6A, 10V | 4V @ 250µA | 26nC @ 10V | 480pF @ 25V | 10V | ±20V |
