- Manufacture :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,225
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ON Semiconductor | MOSFET N-CH 800V 2.2A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 43W (Tc) | N-Channel | - | 800V | 2.2A (Tc) | 3.6 Ohm @ 1.1A, 10V | 5V @ 250µA | 25nC @ 10V | 880pF @ 25V | 10V | ±30V | ||
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1,797
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 900V 4A TO220F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 37W (Tc) | N-Channel | - | 900V | 4A (Tc) | 3.6 Ohm @ 2A, 10V | 4.5V @ 250µA | 22nC @ 10V | 880pF @ 25V | 10V | ±30V | |||
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1,523
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ON Semiconductor | MOSFET N-CH 800V 3.9A I2PAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 130W (Tc) | N-Channel | - | 800V | 3.9A (Tc) | 3.6 Ohm @ 1.95A, 10V | 5V @ 250µA | 25nC @ 10V | 880pF @ 25V | 10V | ±30V | |||
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1,141
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ON Semiconductor | MOSFET N-CH 800V 3.9A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 130W (Tc) | N-Channel | - | 800V | 3.9A (Tc) | 3.6 Ohm @ 1.95A, 10V | 5V @ 250µA | 25nC @ 10V | 880pF @ 25V | 10V | ±30V |
