Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GP2M010A065H
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RFQ
1,529
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Global Power Technologies Group MOSFET N-CH 650V 9.5A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 198W (Tc) N-Channel 650V 9.5A (Tc) 820 mOhm @ 4.75A, 10V 5V @ 250µA 36nC @ 10V 1670pF @ 25V 10V ±30V
GP2M010A065F
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RFQ
1,018
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Global Power Technologies Group MOSFET N-CH 650V 9.5A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 52W (Tc) N-Channel 650V 9.5A (Tc) 820 mOhm @ 4.75A, 10V 5V @ 250µA 36nC @ 10V 1670pF @ 25V 10V ±30V
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